GERMANIUM NO FURTHER A MYSTERY

≤ 0.fifteen) is epitaxially grown over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the framework is cycled by way of oxidizing and annealing stages. A result of the preferential oxidation of Si over Ge [sixty eight], the original Si1–Polycrystalline Ge thin films have attracted significant focus as potential